公开(公告)号：US20160056826A1

公开(公告)日：2016-02-25

申请号：US14632468

申请日：2015-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Seok KIM ,  Tae-Ik KIM ,  Ji-Hyun KIM

IPC: H03L7/089 ,  H02M3/04

CPC classification number: H03L7/0891 ,  H02M3/04

Abstract: Provided are a semiconductor device and a phase-locked loop (PLL) including the same. The semiconductor device including an output node from which an output signal is output, a first transistor which has a drain connected to the output node and is gated by a first signal to increase a voltage level of the output node, a second transistor which has a drain connected to the output node, is gated by a second signal which is a complementary signal of the first signal, and reduces the voltage level of the output node, a pull-up circuit which provides a first compensation current varying according to the voltage level of the output node to a source of the first transistor, and a pull-down circuit which provides a second compensation current varying according to the voltage level of the output node to a source of the second transistor.

Abstract translation: 提供了包括其的半导体器件和锁相​​环（PLL）。 所述半导体器件包括输出信号被输出的输出节点，具有连接到所述输出节点的漏极并由第一信号选通以增加所述输出节点的电压电平的第一晶体管，具有 连接到输出节点的漏极由作为第一信号的互补信号的第二信号选通，并且降低输出节点的电压电平，提供根据电压电平变化的第一补偿电流的上拉电路 的输出节点连接到第一晶体管的源极;以及下拉电路，其提供根据输出节点的电压电平而变化到第二晶体管的源极的第二补偿电流。

公开(公告)号：US20150198485A1

公开(公告)日：2015-07-16

申请号：US14569861

申请日：2014-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Seok KIM

IPC: G01K7/01 ,  G01K13/00 ,  G01R31/28

CPC classification number: G01K7/01

Abstract: Temperature sensing circuits are provided. The temperature sensing circuits may include a temperature sensing unit and a buffer unit. The temperature sensing unit may include a transistor that has a first pair of terminals having a first PN junction of the transistor therebetween and a second pair of terminals having a second PN junction of the transistor therebetween. The first pair of terminals are connected together. The temperature sensing unit may output a first temperature sensing voltage comprising a voltage between the second pair of terminals at a first node. The buffer unit may be connected to the first node. The buffer unit may have a cascode follower structure and may output a second temperature sensing voltage that has a magnitude proportional to a magnitude of the first temperature sensing voltage at a second node.

Abstract translation: 提供温度检测电路。 温度感测电路可以包括温度感测单元和缓冲单元。 温度感测单元可以包括晶体管，其具有第一对端子，其具有晶体管之间的第一PN结，以及具有晶体管之间的第二PN结的第二对端子。 第一对端子连接在一起。 温度感测单元可以在第一节点处输出包括第二对终端之间的电压的第一温度感测电压。 缓冲单元可以连接到第一节点。 缓冲单元可以具有共源共栅跟随器结构，并且可以输出具有与第二节点处的第一温度感测电压的幅度成比例的幅度的第二温度感测电压。