公开(公告)号：US20240145416A1

公开(公告)日：2024-05-02

申请号：US18384250

申请日：2023-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonyoung CHOI ,  Minwoo Rhee ,  Sungyoung Yoon ,  Jaehyun Phee ,  Bumki Moon ,  Kyeongbin Lim

IPC: H01L23/00 ,  H01L23/528

CPC classification number: H01L24/03 ,  H01L23/5283 ,  H01L24/05 ,  H01L24/08 ,  H01L2224/03444 ,  H01L2224/05147 ,  H01L2224/05447 ,  H01L2224/08145

Abstract: A substrate bonding method includes: forming first plasma on a bonding surface of a first substrate at atmospheric pressure by using a mixed gas including an inert gas and water vapor, to thereby perform surface activation treatment on the bonding surface of the first substrate; forming second plasma on a bonding surface of a second substrate at atmospheric pressure by using the mixed gas, to thereby perform surface activation treatment on the bonding surface of the second substrate; bonding the bonding surface of the first substrate and the bonding surface of the second substrate to each other; and moving each of the first substrate and the second substrate at a constant speed in a region above a linear reactor in which the first plasma and the second plasma are formed.