公开(公告)号：US20220337764A1

公开(公告)日：2022-10-20

申请号：US17571682

申请日：2022-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha Na CHOI ,  Hong Hyun JEON ,  Ji Eun LEE ,  Won Chul CHOI

IPC: H04N5/347 ,  H01L27/146 ,  H01L23/00 ,  H04N5/378 ,  H04N9/04

Abstract: An image sensor includes a pixel group. The pixel group includes a first color filter, first to third photodiodes below the first color filter such that the first color filter overlaps each of the first to third third photodiodes in a vertical direction, wherein the first to third photodiodes are arranged in a first direction perpendicular to the vertical direction, first to third floating diffusions configured to accumulate electric charges generated by the first to third photodiodes, respectively, a source follower transistor configured to output a first pixel signal based on the electric charges accumulated in at least one of the first to third floating diffusions, and a first metal layer configured to receive the first pixel signal from the source follower transistor, wherein the first metal layer extends in a second direction intersecting the first direction, wherein the first to third floating diffusions are arranged in the first direction.