公开(公告)号：US20190148337A1

公开(公告)日：2019-05-16

申请号：US16002018

申请日：2018-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-hoon KIM ,  Kil-soo KIM ,  Kyung-suk OH ,  Tae-joo HWANG

IPC: H01L25/065 ,  H01L23/552 ,  H01L23/367

Abstract: An electronic device includes a circuit board, a semiconductor device package mounted on the circuit board, the semiconductor device package including a package substrate connected to the circuit board, a first semiconductor device and a second semiconductor device mounted side by side on the package substrate, and a molding surrounding a sidewall of the first semiconductor device and a sidewall of the second semiconductor device, the molding not covering a top surface of the first semiconductor device, and a heat dissipation structure on the semiconductor device package, the top surface of the first semiconductor device being in contact with the heat dissipation structure.

公开(公告)号：US20200343219A1

公开(公告)日：2020-10-29

申请号：US16923418

申请日：2020-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-hoon KIM ,  Kil-soo KIM ,  Kyung-suk OH ,  Tae-joo HWANG

IPC: H01L25/065 ,  H01L23/552 ,  H01L23/367 ,  H04M1/02

Abstract: An electronic device includes a circuit board, a semiconductor device package mounted on the circuit board, the semiconductor device package including a package substrate connected to the circuit board, a first semiconductor device and a second semiconductor device mounted side by side on the package substrate, and a molding surrounding a sidewall of the first semiconductor device and a sidewall of the second semiconductor device, the molding not covering a top surface of the first semiconductor device, and a heat dissipation structure on the semiconductor device package, the top surface of the first semiconductor device being in contact with the heat dissipation structure.

公开(公告)号：US20200027862A1

公开(公告)日：2020-01-23

申请号：US16585123

申请日：2019-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-seok SONG ,  Chan-kyung KIM ,  Tae-joo HWANG

IPC: H01L25/10 ,  H01L23/498 ,  G11C5/06 ,  G11C5/04

Abstract: A semiconductor package includes: a memory sub-package including a first connecting layer and a plurality of memory chips disposed on the first connecting layer; a logic sub-package including a second connecting layer, a controller chip disposed on the second connecting layer, and a buffer chip connected to the controller chip and the plurality of memory chips; and a plurality of inter-package connecting members each of which connects the memory sub-package and the logic sub-package, wherein the buffer chip is connected to the plurality of memory chips via a plurality of first data transfer lines each having a first data transfer rate, the buffer chip is connected to the controller chip via a plurality of second data transfer lines each having a second data transfer rate, and the first data transfer rate is less than the second data transfer rate.