公开(公告)号：US09390961B2

公开(公告)日：2016-07-12

申请号：US14481932

申请日：2014-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mong-Sup Lee ,  Byoung-Yong Gwak ,  Byung-Ho Kwak ,  Yoon-Kyung Kim ,  Tae-Joon Park ,  Byung-Sul Ryu ,  In-Seak Hwang

IPC: H01L21/70 ,  H01L21/762 ,  H01L27/108

CPC classification number: H01L21/762 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a first bit line structure extending in a first direction, a second bit line structure extending in the first direction and spaced apart from the first bit line structure, a storage contact plug located between the first bit line structure and the second bit line structure, and extending in a second direction perpendicular to the first direction, a first plug insulator located between the first bit line structure and the second bit line structure, and configured to contact a side surface extending in the second direction of the storage contact plug, and a plug isolation pattern located between the first bit line structure and the first plug insulator.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括沿第一方向延伸的第一位线结构，在第一方向上延伸并与第一位线结构间隔开的第二位线结构，位于第一位线结构和第二位之间的存储接触插塞 线结构，并且在垂直于第一方向的第二方向上延伸;第一插塞绝缘体，位于第一位线结构和第二位线结构之间，并且被配置为接触沿着存储接触插塞的第二方向延伸的侧表面 以及位于第一位线结构和第一插塞绝缘体之间的插头隔离图案。