公开(公告)号：US20200339618A1

公开(公告)日：2020-10-29

申请号：US16702791

申请日：2019-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung Lee ,  Hiroshi Nihei ,  Takamasa Miyazaki ,  Yousuke Satou ,  Kouhei Sugimoto ,  Masashi Shirai ,  Jaesoon Lim ,  Younsoo Kim ,  Younjoung Cho

IPC: C07F15/06 ,  C23C16/455 ,  C23C16/18 ,  H01L21/3213 ,  H01L21/02

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

公开(公告)号：US11254698B2

公开(公告)日：2022-02-22

申请号：US16702791

申请日：2019-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Hiroshi Nihei ,  Takamasa Miyazaki ,  Yousuke Satou ,  Kouhei Sugimoto ,  Masashi Shirai ,  Jaesoon Lim ,  Younsoo Kim ,  Younjoung Cho

IPC: C23C16/18 ,  H01L21/02 ,  H01L21/3213 ,  C07F15/06 ,  C23C16/455

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.