-
1.发明申请公开(公告)号：US20190163858A1
公开(公告)日：2019-05-30
申请号：US16117086
申请日：2018-08-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ki-Ho YANG , Jun-Young JANG , Chang-Hwan KIM , Sung-Soo SUH
IPC: G06F17/50 , H01L21/8234 , H01L27/02 , G03F1/36
Abstract: In a method of designing a mask, a first mask including an active region, a gate structure, and a gate tap partially overlapping the active region and the gate structure is designed. The first mask is changed so that a portion of the gate tap is extended. An OPC is performed on the changed first mask to design a second mask.
Search Results
1
records
(took 0.01 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
