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公开(公告)号：US20220155674A1
公开(公告)日：2022-05-19
申请号：US17462401
申请日：2021-08-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kangmin JUNG , Sangwook PARK
IPC: G03F1/36 , G06F30/398
Abstract: An optical proximity correction method of a lithography system includes dividing a transmission cross coefficient (TCC) for each slit region; generating an optical proximity correction (OPC) model to which the divided TCC is applied; measuring an apodization value for each slit position; fitting critical dimension (CD) data for each slit position to a simulation CD of the OPC model; and correcting the OPC model using the fitted CD data.
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