公开(公告)号：US20250142809A1

公开(公告)日：2025-05-01

申请号：US18760232

申请日：2024-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangin Kim ,  Kyounghwan Kim

IPC: H10B12/00

Abstract: A semiconductor device includes a gate trench extending in a first direction on a substrate, first active fins protruding from a bottom of the gate trench, an upper surface of each of the first active fins having a first vertical level, a second active fin in the gate trench, an upper surface of the second active fin having a second vertical level higher than the first vertical level, and a gate structure on an isolation pattern filling the gate trench. A first portion of the gate structure overlapping with upper portions of the first active fins includes a first electrode. A second portion of the gate structure overlapping an upper portion of the second active fin includes a second electrode. A vertical height of the second electrode is greater than a vertical height of the first electrode.