公开(公告)号：US20190058010A1

公开(公告)日：2019-02-21

申请号：US15869466

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han KIM ,  Jong-wook JEON ,  Ui-hui KWON

IPC: H01L27/30 ,  H01L33/08 ,  H01L27/146 ,  G06F17/50 ,  H01L27/12

Abstract: A method of manufacturing an image sensor that includes first and second semiconductor chips includes receiving manufacturing data respectively associated with the first and second semiconductor chips, processing the manufacturing data to determine a capacitance and a resistance of a pixel signal transmission line to which a pixel signal generated by each pixel of the plurality of pixels is transmitted, where the capacitance and the resistance corresponding to position information associated with each pixel of the plurality of pixels, and determining predicted characteristics of the image sensor based on the determined capacitance and resistance, prior to the first semiconductor chip being electrically connected to the second semiconductor chip. The first semiconductor chip may be electrically connected to the second semiconductor chip to form the image sensor based on a determination that the predicted characteristics of the image sensor at least meet a particular set of one or more target values.