公开(公告)号：US20190220568A1

公开(公告)日：2019-07-18

申请号：US16102888

申请日：2018-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Kyu RYU ,  Minsu KIM

IPC: G06F17/50 ,  H01L27/02 ,  H01L29/66

Abstract: A semiconductor device includes a first standard cell and a second standard cell. A single diffusion break region extending in a first direction is formed in the first standard cell, and a first edge region extending in the first direction and having a maximum cutting depth in a depth direction perpendicular to the first direction is in the first standard cell. A double diffusion break region extending in the first direction is formed in the second standard cell, and a second edge region extending in the first direction and having the maximum cutting depth in the depth direction is formed in the second standard cell.

公开(公告)号：US20200349314A1

公开(公告)日：2020-11-05

申请号：US16933281

申请日：2020-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Kyu RYU ,  Minsu KIM

IPC: G06F30/392 ,  H01L29/66 ,  H01L27/02 ,  H01L27/118

Abstract: A semiconductor device includes a first standard cell and a second standard cell. A single diffusion break region extending in a first direction is formed in the first standard cell, and a first edge region extending in the first direction and having a maximum cutting depth in a depth direction perpendicular to the first direction is in the first standard cell. A double diffusion break region extending in the first direction is formed in the second standard cell, and a second edge region extending in the first direction and having the maximum cutting depth in the depth direction is formed in the second standard cell.