公开(公告)号：US11195997B2

公开(公告)日：2021-12-07

申请号：US16826778

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhwan Paik ,  Yongjin Park ,  Jinwook Yang ,  Gyuhwan Oh ,  Jiyoon Chung

IPC: H01L47/00 ,  H01L45/00 ,  H01L23/528 ,  H01L27/24

Abstract: A variable resistance memory device includes a first conductive line structure having an adiabatic line therein on a substrate, a variable resistance pattern contacting an upper surface of the first conductive line structure, a low resistance pattern contacting an upper surface of the variable resistance pattern, a selection structure on the low resistance pattern, and a second conductive line on the selection structure.

公开(公告)号：US20200220077A1

公开(公告)日：2020-07-09

申请号：US16824927

申请日：2020-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin-Jae Kang ,  Gyuhwan Oh ,  Jiyoon Chung ,  Junyeon Hwang

IPC: H01L45/00 ,  H01L27/24

Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.

公开(公告)号：US11502132B2

公开(公告)日：2022-11-15

申请号：US17158287

申请日：2021-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwook Yang ,  Gyuhwan Oh ,  Junhwan Paik ,  Jiyoon Chung

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor memory device including a substrate; a first conductive line on the substrate and extending in a first direction that is parallel to an upper surface of the substrate; a second conductive line extending in a second direction that intersects the first direction; a memory cell between the conductive lines and including a lower electrode pattern, a data storage element, an intermediate electrode pattern, a switching element, and an upper electrode pattern sequentially stacked on the first conductive line; and a sidewall spacer on a side surface of the memory cell, wherein the side surface of the memory cell includes a first concave portion at a side surface of the switching element, and the sidewall spacer includes a first portion on a side surface of the upper electrode pattern, and a second portion on the first concave portion, the second portion being thicker than the first portion.

公开(公告)号：US11127900B2

公开(公告)日：2021-09-21

申请号：US16824927

申请日：2020-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin-Jae Kang ,  Gyuhwan Oh ,  Jiyoon Chung ,  Junyeon Hwang

IPC: H01L27/24 ,  H01L45/00

Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.

公开(公告)号：US10720577B2

公开(公告)日：2020-07-21

申请号：US15862133

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin-Jae Kang ,  Gyuhwan Oh ,  Jiyoon Chung ,  Junyeon Hwang

IPC: H01L27/24 ,  H01L45/00

Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.

公开(公告)号：US20190067569A1

公开(公告)日：2019-02-28

申请号：US15862133

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin-Jae Kang ,  Gyuhwan Oh ,  Jiyoon Chung ,  Junyeon Hwang

IPC: H01L45/00 ,  H01L27/24

Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.