公开(公告)号：US20250159946A1

公开(公告)日：2025-05-15

申请号：US18811194

申请日：2024-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Baekwon PARK ,  Keunwook SHIN ,  Changhyun KIM ,  Minsu SEOL ,  Joungeun YOO ,  Hyunmi LEE

IPC: H01L29/76 ,  H01L21/02 ,  H01L21/443 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device may include a gate electrode, a metal nitride layer on the gate electrode, a gate insulating film on the metal nitride layer, a channel on the gate insulating film, a source electrode in one side of the channel, and a drain electrode in another side of the channel.