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公开(公告)号:US20230362505A1
公开(公告)日:2023-11-09
申请号:US18221921
申请日:2023-07-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jungbin YUN , Hwanwoong KIM , Eunsub SHIM , Kyungho LEE , Hongsuk LEE
IPC: H04N5/335 , H01L27/146
CPC classification number: H04N25/59 , H04N25/709 , H04N25/42 , H04N25/76 , H01L27/14603 , H01L27/14645 , H01L27/14621
Abstract: An image sensor includes: a first pixel connected to a column line; and a second pixel connected to the column line. Each of the first pixel and the second pixel includes: one photodiode; a first floating diffusion region; a second floating diffusion region; one first transistor connected between the one photodiode and the first floating diffusion region; a second transistor connected between the first floating diffusion region and the second floating diffusion region; a third transistor connected to the second floating diffusion region; a fourth transistor including a gate connected to the first floating diffusion region; and a fifth transistor including a drain connected to a source of the fourth transistor and a source connected to the column line. The second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are electrically connected without an intermediate transistor.
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公开(公告)号:US20220345649A1
公开(公告)日:2022-10-27
申请号:US17860878
申请日:2022-07-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jungbin YUN , Hwanwoong KIM , Eunsub SHIM , Kyungho LEE , Hongsuk LEE
Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.
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公开(公告)号:US20200321383A1
公开(公告)日:2020-10-08
申请号:US16786712
申请日:2020-02-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seungki JUNG , Eunsub SHIM , Kyungho LEE , Sungsoo CHOI , Sanghyuck MOON , Hongsuk LEE
IPC: H01L27/146 , H04N5/378 , H04N5/369 , H04N5/374
Abstract: An image sensor includes: a pixel array outputting a pixel signal; and a column wiring unit including at least one first column routing wiring extending from the pixel array and including a first connection wiring portion and a protrusion and at least one second column routing wiring including a second connection wiring portion, wherein a sum of lengths of the at least one first connection wiring portion and the protrusion is substantially identical to a length of the at least one second connection wiring portion; and a readout circuit receiving the pixel signal from the column wiring unit.
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公开(公告)号:US20230144373A1
公开(公告)日:2023-05-11
申请号:US17984086
申请日:2022-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hwanwoong KIM , Jihun KIM , Jung Bin YUN , Seungjoon LEE , Hongsuk LEE
IPC: H04N5/3745 , H04N5/378 , H01L27/146
CPC classification number: H04N5/3745 , H04N5/378 , H01L27/1463
Abstract: A pixel array including pixels arranged in a matrix shape is provided. The pixels have a same structure and are separated from each other by front deep trench isolation (FDTI). A first pixel among the pixels includes a first floating diffusion region, a first group of photoelectric conversion elements, a first group of charge transfer transistors, a first source follower transistor, and a first transistor, a second transistor, and a first reset transistor connected in series between the first floating diffusion region and a voltage supply line. One of the first transistor, the second transistor, and the first reset transistor is formed in a first sub-pixel region. At least another one of the first transistor, the second transistor, and the first reset transistor is formed in a second sub-pixel region. The first sub-pixel region and the second sub-pixel region are separated from each other by the FDTI.
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公开(公告)号:US20220210348A1
公开(公告)日:2022-06-30
申请号:US17470302
申请日:2021-09-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jueun PARK , Jungbin YUN , Kyungho LEE , Sanghyuck MOON , Hongsuk LEE
IPC: H04N5/353 , H04N5/3745
Abstract: An image sensor includes first conductive patterns on a first surface of a substrate, and second conductive patterns between the first conductive patterns and the first surface, in which at least one of the first conductive patterns or the second conductive patterns includes a time constant adjustment pattern and neighboring conductive patterns, in which the time constant adjustment pattern extends in a first direction that is parallel to the first surface and the neighboring conductive patterns extend in the first direction and are most adjacent to the time constant adjustment pattern. The time constant adjustment pattern includes one or more time constant adjustment portions that protrude in a second direction that is parallel to the first surface and is perpendicular to the first direction, and the one or more time constant adjustment portions do not overlap the neighboring conductive patterns in the second direction.
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公开(公告)号:US20220116557A1
公开(公告)日:2022-04-14
申请号:US17495052
申请日:2021-10-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hongsuk LEE , Sanghyuck MOON , Jueun PARK , Jungbin YUN
IPC: H04N5/355 , H04N5/378 , H04N5/3745 , H01L27/146
Abstract: A pixel array for an image sensor includes: a first pixel including a floating diffusion node, and a first selection transistor configured to output a first pixel signal generated using a voltage of the floating diffusion node of the first pixel; a second pixel including a floating diffusion node, and a second selection transistor configured to output a second pixel signal generated using a voltage of the floating diffusion node of the second pixel; and a column line connected to the first and second selection transistors. The floating diffusion nodes of the first and second pixels may be configured to be electrically connected to each other, and the first selection transistor and the second selection transistor may be configured to be turned on so that the first pixel signal and the second pixel signal are output to the column line, in a low conversion gain mode.
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