Abstract:
A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.
Abstract:
A semiconductor light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes first and second conductive semiconductor layers having an active layer formed therebetween, and first and second electrodes formed on the first and second layers. A first insulation layer is formed on portions of the light emitting cell, while a second insulation layer entirely covers at least one light emitting cell. A method of manufacturing the semiconductor light emitting device, and a light emitting module and an illumination apparatus including the semiconductor light emitting device are also provided.