公开(公告)号：US20240357799A1

公开(公告)日：2024-10-24

申请号：US18508833

申请日：2023-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choong Hyun LEE ,  Joon Cheol KIM ,  Kang-Uk KIM ,  Jin A KIM ,  Byoung Wook JANG ,  Young-Seung CHO

IPC: H10B12/00 ,  G11C5/06

CPC classification number: H10B12/482 ,  G11C5/063 ,  H10B12/315 ,  H10B12/485 ,  H10B12/488 ,  H10B12/50

Abstract: There is provided a semiconductor memory device capable of improving performance and reliability of an element. The semiconductor memory device includes a substrate including a cell region and a peripheral region, a cell region isolation layer in the substrate, isolating the cell region from the peripheral region, an isolation active region surrounded by the cell region isolation layer, a bit line structure on the cell region, including a cell conductive line and a cell gate electrode in the substrate of the cell region, crossing the cell conductive line.

公开(公告)号：US20240107751A1

公开(公告)日：2024-03-28

申请号：US18352528

申请日：2023-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin A KIM ,  Kang-Uk KIM ,  Sang Hoon MIN ,  Choong Hyun LEE

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/312 ,  H10B12/482 ,  H10B12/488

Abstract: A semiconductor memory device is provided. The semiconductor memory device comprises a substrate including a cell region having an active region defined by a cell element isolation layer, a peripheral region near the cell region, and a boundary region between the cell region and the peripheral region. The device includes a word line structure in the substrate and extending in a first direction, a bit line structure on the substrate extending from the cell region to the boundary region in a second direction that crosses the first direction, including first and second cell conductive layers sequentially stacked on the substrate, and a bit line contact between the substrate and the bit line structure and connecting the substrate with the bit line structure. The second cell conductive layer in the boundary region is thicker than the second cell conductive layer in the cell region.