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    NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE
    2.
    发明申请
    NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    基于氮化物的半导体发光器件

    公开(公告)号：US20140183546A1

    公开(公告)日：2014-07-03

    申请号：US13973720

    申请日：2013-08-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung-sub KIM ,  Jin-sub LEE ,  Cheol-soo SONE ,  Kyung-wook HWANG

    IPC: H01L33/32

    CPC classification number: H01L33/38 ,  H01L33/405

    Abstract: A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer.

    Abstract translation: 氮化物系半导体发光元件包括n型氮化物系半导体层，有源层，p型氮化物系半导体层，覆盖p型氮化物系半导体的一部分的欧姆接触层 以及包括与p型氮化物类半导体层接触的第一部分和与欧姆接触层接触的第二部分的p电极。

    SEMICONDUCTOR LIGHT EMITTING DEVICE WITH DOPED BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE WITH DOPED BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME 审中-公开
    具有二极管缓冲层的半导体发光器件及其制造方法

    公开(公告)号：US20140014897A1

    公开(公告)日：2014-01-16

    申请号：US13923048

    申请日：2013-06-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-sub KIM ,  Denis SANNIKOV ,  Cheol-soo SONE ,  Jin-sub LEE

    IPC: H01L33/06

    CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/32

    Abstract: According to example embodiments, a semiconductor light emitting device including a doped buffer layer includes a substrate and a buffer layer on the substrate. The doping layer may include aluminum nitride (AlN) and the buffer layer may include a doping layer. An n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer may be on the buffer layer. An n-side electrode may be on the n-type nitride semiconductor layer. A p-side electrode may be on the p-type nitride semiconductor layer.

    Abstract translation: 根据示例性实施例，包括掺杂缓冲层的半导体发光器件包括衬底和衬底上的缓冲层。 掺杂层可以包括氮化铝（AlN），并且缓冲层可以包括掺杂层。 n型氮化物半导体层，有源层和p型氮化物半导体层可以在缓冲层上。 n侧电极可以在n型氮化物半导体层上。 p侧电极可以在p型氮化物半导体层上。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20150364652A1

    公开(公告)日：2015-12-17

    申请号：US14736217

    申请日：2015-06-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jong-in YANG ,  Tae-hyung KIM ,  Si-hyuk LEE ,  Sang-yeob SONG ,  Cheol-soo SONE ,  Hak-hwan KIM ,  Jin-hyun LEE

    IPC: H01L33/38 ,  H01L33/62

    CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

    Abstract translation: 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过 基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。

    METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE
    5.
    发明申请
    METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE 有权
    制造发光装置的方法

    公开(公告)号：US20140227814A1

    公开(公告)日：2014-08-14

    申请号：US14253478

    申请日：2014-04-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae-Hyung KIM ,  Cheol-soo SONE ,  Jong-in YANG ,  Sang-yeob SONG ,  Si-hyuk LEE

    IPC: H01L33/38

    CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

    Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

    Abstract translation: LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并连接到各个化合物层的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 形成在另一个侧表面上的第二电极连接层连接到第二电极层。 通过在发光装置的相应侧表面上形成连接层，可以降低制造成本。

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