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公开(公告)号：US09761818B2
公开(公告)日：2017-09-12
申请号：US15168342
申请日：2016-05-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngjun Yun , Joo Young Kim , Byong Gwon Song , Jaewon Jang , Jiyoung Jung , Ajeong Choi
CPC classification number: H01L51/0545 , H01L27/283 , H01L51/0017 , H01L51/0018 , H01L51/0074 , H01L51/0558
Abstract: A method of manufacturing a thin film transistor includes forming a gate electrode, forming a gate insulating layer on the gate electrode, forming an organic semiconductor layer on the gate insulating layer, forming a solvent selective photosensitive layer on the organic semiconductor layer, forming an organic semiconductor pattern and a solvent selective photosensitive pattern by simultaneously patterning the organic semiconductor layer and the solvent selective photosensitive layer, respectively, and forming a source electrode and a drain electrode on the organic semiconductor pattern and the solvent selective photosensitive pattern, the source electrode and the drain electrode being electrically connected to the organic semiconductor pattern.
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公开(公告)号：US12256585B2
公开(公告)日：2025-03-18
申请号：US17675387
申请日：2022-02-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joo Young Kim , Byong Gwon Song , Jeong Il Park , Jiyoung Jung
Abstract: A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.
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公开(公告)号：US11296289B2
公开(公告)日：2022-04-05
申请号：US16203831
申请日：2018-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joo Young Kim , Byong Gwon Song , Jeong Il Park , Jiyoung Jung
IPC: H01L51/10 , H01L27/28 , H01L21/84 , H01L51/05 , H01L51/00 , H01L29/423 , H01L51/40 , H01L21/336
Abstract: A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.
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公开(公告)号：US11139440B2
公开(公告)日：2021-10-05
申请号：US16747901
申请日：2020-01-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joo Young Kim , Byong Gwon Song , Jeong Il Park , Jiyoung Jung
IPC: H01L51/05 , G02F1/1368 , H01L27/28 , H01L51/00
Abstract: Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.
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