公开(公告)号：US20170097543A1

公开(公告)日：2017-04-06

申请号：US15078426

申请日：2016-03-23

Applicant: Samsung Display Co., Ltd.

Inventor： Hoon KANG ,  Bum Soo KAM ,  Sung Won DOH ,  Chong Sup CHANG

IPC: G02F1/1335 ,  H01L27/12

CPC classification number: G02F1/133528 ,  G02F1/133502 ,  G02F1/133512 ,  G02F1/133536 ,  G02F2001/133548 ,  G02F2001/133562 ,  G02F2202/36 ,  H01L27/124 ,  H01L27/1262

Abstract: A thin film transistor substrate, a display device including the same, and a method of manufacturing a thin film transistor substrate. The thin film transistor substrate includes: a base plate including a first area and a second area; a nano uneven pattern formed on one side of the base plate in the first area; a wire grid pattern formed on the ne side of the base plate in the second area; a gate electrode disposed on and overlapping the wire grid pattern; and one of a source electrode and a drain electrode disposed on the gate electrode and overlapping the wire grid pattern.