公开(公告)号：US11810511B2

公开(公告)日：2023-11-07

申请号：US17741833

申请日：2022-05-11

Applicant: Samsung Display Co., Ltd.

Inventor： Hanbit Kim ,  Taewook Kang ,  Doo-Na Kim ,  Sangsub Kim ,  Yunjung Oh ,  Dokyeong Lee ,  Jaehwan Chu

IPC: G09G3/3241 ,  G09G3/3291

CPC classification number: G09G3/3241 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/027 ,  G09G2330/021

Abstract: A pixel includes an organic light-emitting diode, a driving transistor, a first dual gate transistor, a first capacitor, and a compensation transistor. The organic light-emitting diode includes first and second terminals. The driving transistor generates the driving current and includes a first terminal to which a first power supply voltage is applied, a second terminal connected to the first terminal of the organic light-emitting diode, and a gate terminal. The first dual gate transistor is connected between the gate terminal of the driving transistor and the second terminal of the driving transistor and includes first and second sub-transistors. The first capacitor includes a first electrode to which the first power supply voltage is applied, and a second electrode connected to a first node that connects the first and second sub-transistors to each other. The compensation transistor includes a terminal connected between the second electrode and the first node.

公开(公告)号：US12112705B2

公开(公告)日：2024-10-08

申请号：US18376160

申请日：2023-10-03

Applicant: Samsung Display Co., Ltd.

Inventor： Hanbit Kim ,  Taewook Kang ,  Doo-Na Kim ,  Sangsub Kim ,  Yunjung Oh ,  Dokyeong Lee ,  Jaehwan Chu

IPC: G09G3/32 ,  G09G3/3241 ,  G09G3/3291

CPC classification number: G09G3/3241 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/027 ,  G09G2330/021

Abstract: A pixel includes an organic light-emitting diode, a driving transistor, a first dual gate transistor, a first capacitor, and a compensation transistor. The organic light-emitting diode includes first and second terminals. The driving transistor generates the driving current and includes a first terminal to which a first power supply voltage is applied, a second terminal connected to the first terminal of the organic light-emitting diode, and a gate terminal. The first dual gate transistor is connected between the gate terminal of the driving transistor and the second terminal of the driving transistor and includes first and second sub-transistors. The first capacitor includes a first electrode to which the first power supply voltage is applied, and a second electrode connected to a first node that connects the first and second sub-transistors to each other. The compensation transistor includes a terminal connected between the second electrode and the first node.

公开(公告)号：US11727882B2

公开(公告)日：2023-08-15

申请号：US17489399

申请日：2021-09-29

Applicant: Samsung Display Co., Ltd.

Inventor： Hanbit Kim ,  Meejae Kang ,  Keunwoo Kim ,  Doo-Na Kim ,  Sangsub Kim ,  Do Kyeong Lee ,  Jaehwan Chu

IPC: G09G3/3258 ,  G09G3/3266

CPC classification number: G09G3/3258 ,  G09G3/3266 ,  G09G2300/0426

Abstract: A pixel includes: a capacitor connected between a first voltage line and a first node; a light emitting diode including a first electrode connected to a second node, and a second electrode connected to a second voltage line; a first transistor; a second transistor; a third transistor including a first electrode connected to the first node, a second electrode connected to the second node, and a gate electrode to receive a first scan signal; a fourth transistor including a first electrode connected to the first node, a second electrode connected to a third voltage line to receive a third voltage, and a gate electrode to receive a second scan signal; and a compensation transistor including a first electrode connected to the first node, a second electrode connected to a fourth voltage line to receive a compensation voltage, and a gate electrode to receive a compensation control voltage.

公开(公告)号：US11600229B2

公开(公告)日：2023-03-07

申请号：US17684227

申请日：2022-03-01

Applicant: Samsung Display Co., Ltd.

Inventor： Hanbit Kim ,  Meejae Kang ,  Keunwoo Kim ,  Doo-Na Kim ,  Sangsub Kim ,  Dokyeong Lee ,  Jaehwan Chu

IPC: G09G3/3233

Abstract: A pixel includes a first capacitor connected between a first electrode and a second electrode connected to a first node, a first transistor including a gate electrode connected to the first node, a first electrode connected to a second node, and a second electrode connected to a third node, a second transistor including a gate electrode that receives a data write gate signal, a first electrode that receives a data voltage, and a second electrode connected to the second node, a third transistor connected between the first node and the third node, a fourth transistor connected between the first node and an initialization voltage input terminal to which an initialization voltage is applied, an eighth transistor t connected to the third transistor and the fourth transistor, and an organic light emitting diode including an anode and a cathode receiving a second power supply voltage.

公开(公告)号：US12120919B2

公开(公告)日：2024-10-15

申请号：US17679691

申请日：2022-02-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jaehwan Chu ,  Meejae Kang ,  Keunwoo Kim ,  Doona Kim ,  Sangsub Kim ,  Hanbit Kim ,  Dokyeong Lee ,  Yongsu Lee

IPC: H10K59/12 ,  H10K59/121

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/1201

Abstract: A method of manufacturing a display apparatus includes forming a first photosensitive pattern and a second photosensitive pattern of different thicknesses on an active layer; forming a driving semiconductor layer and a compensation semiconductor layer using the first photosensitive pattern and the second photosensitive pattern as masks to etch the active layer; exposing an upper surface of the driving semiconductor layer by etching the first photosensitive pattern and forming a third photosensitive pattern by etching at least a portion of the second photosensitive pattern; forming a first insulating layer on the driving semiconductor layer and the third photosensitive pattern; exposing an upper surface of the compensation semiconductor layer by stripping the third photosensitive pattern; and forming a second insulating layer on the first insulating layer and the compensation semiconductor layer.

公开(公告)号：US11455952B2

公开(公告)日：2022-09-27

申请号：US17084142

申请日：2020-10-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim ,  Doona Kim ,  Sangsub Kim ,  Dokyeong Lee ,  Jaehwan Chu

IPC: G09G3/3233 ,  H01L51/00 ,  H01L27/32

Abstract: A display apparatus includes a first thin-film transistor including a semiconductor layer arranged on a substrate, a driving gate electrode arranged on the semiconductor layer, and a first electrode arranged between the substrate and the semiconductor layer, a second thin-film transistor transmitting a data signal received through a data line to the first thin-film transistor according to a first scan signal received through a first scan line, and a third thin-film transistor transmitting a first voltage to the first electrode according to a second scan signal received through a second scan line.

公开(公告)号：US12262589B2

公开(公告)日：2025-03-25

申请号：US17079765

申请日：2020-10-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim ,  Hyena Kwak ,  Sangsub Kim ,  Hanbit Kim

IPC: H10K59/121 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  H10K59/131

Abstract: A pixel includes: a driving transistor including a semiconductor layer and a gate electrode; and a compensation transistor connected to the gate electrode and the semiconductor layer of the driving transistor, wherein the first thin-film transistor includes: a first sub-transistor including a first gate electrode receiving a first scan signal having a first voltage level during a period; and a second sub-transistor connected to the first sub-transistor in parallel and comprising a second gate electrode receiving a second scan signal having a second voltage level that is an inverted level of the first voltage level during the same period.

公开(公告)号：US11974474B2

公开(公告)日：2024-04-30

申请号：US17158362

申请日：2021-01-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaehwan Chu ,  Keunwoo Kim ,  Taewook Kang ,  Doona Kim ,  Sangsub Kim ,  Bummo Sung ,  Dokyeong Lee ,  Yongsu Lee

IPC: H01L27/32 ,  G09G3/3233 ,  H10K59/131

CPC classification number: H10K59/131 ,  G09G3/3233

Abstract: An organic light-emitting display apparatus includes an organic light-emitting diode, a driving transistor configured to control an amount of electric current flowing to the organic light-emitting diode from a power line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to first and second compensation gate electrodes of the compensation transistor, and a gate insulating layer between the compensation gate electrodes and a compensation active region of a compensation transistor. A layer structure of the gate insulating layer between the first compensation gate electrode and the compensation active region is different from a layer structure of the gate insulating layer between the second compensation gate electrode and the compensation active region.

公开(公告)号：US20230165071A1

公开(公告)日：2023-05-25

申请号：US17991866

申请日：2022-11-22

Applicant: Samsung Display Co., Ltd.

Inventor： Hyojung Kim ,  Sangsub Kim ,  Jongwoo Park ,  Junehwan Kim ,  Taeyoung Kim ,  Youngtae Choi ,  Hyuncheol Hwang

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/05 ,  H01L51/00

CPC classification number: H01L27/3274 ,  H01L51/0037 ,  H01L51/56 ,  H01L51/0094 ,  H01L51/0512 ,  H01L2227/323

Abstract: The invention provides a display apparatus and a method for manufacturing the same. The display apparatus includes a substrate and a thin-film transistor. The thin-film transistor includes a semiconductor layer disposed on the substrate and includes a gate electrode overlapping the semiconductor layer and insulated from the semiconductor layer. The semiconductor layer includes a polysilicon layer and an organic layer. The polysilicon layer has a first surface and has an uneven surface overlapping the first surface. The organic layer is disposed on the uneven surface of polysilicon layer and includes an organic semiconductor material.