公开(公告)号：US10741625B2

公开(公告)日：2020-08-11

申请号：US16352262

申请日：2019-03-13

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Sangmoo Choi ,  Wonkyu Kwak ,  Jinwoo Park ,  Dongsun Lee

IPC: G09G3/32 ,  H01L27/32 ,  H01L51/00 ,  G09G3/3233 ,  H01L29/786 ,  H01L27/12

Abstract: A display apparatus includes a substrate including a display area; a first thin film transistor arranged on the display area of the substrate and having a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer by a first gate insulating layer; a second thin film transistor arranged on the display area of the substrate and having a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer; and a storage capacitor at least partially overlapping the first thin film transistor and having a lower electrode and an upper electrode, wherein the second semiconductor layer and one of the lower electrode and the upper electrode are arranged on a same layer.

公开(公告)号：US12144203B2

公开(公告)日：2024-11-12

申请号：US17705434

申请日：2022-03-28

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Kiwook Kim ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H10K59/121 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

Abstract: A display apparatus may include a first transistor, a second transistor, and a capacitor. The first transistor includes a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer. The first semiconductor layer includes a first silicon semiconductor. The second transistor includes a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer. The second semiconductor layer includes a first oxide semiconductor. The capacitor includes a first electrode and a second electrode. The second electrode overlaps the first electrode and extends from the second semiconductor layer.

公开(公告)号：US11600679B2

公开(公告)日：2023-03-07

申请号：US16250090

申请日：2019-01-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyunchol Bang ,  Chulkyu Kang ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H01L27/32 ,  H01L27/12

Abstract: A display apparatus includes a first transistor, a first data line, a second data line, a driving voltage line, and a first insulating layer. The first transistor includes a first semiconductor layer and a first gate electrode. The first semiconductor layer includes a source region and a drain region. The first data line is disposed at a left side of the first transistor, and the second data line is disposed at a right side of the first transistor. The driving voltage line at least partially overlaps the first data line and the second data line. The first insulating layer is disposed between the first data line and the driving voltage line and between the second data line and the driving voltage line.

公开(公告)号：US11289561B2

公开(公告)日：2022-03-29

申请号：US16851023

申请日：2020-04-16

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Kiwook Kim ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

Abstract: A display apparatus may include a first transistor, a second transistor, and a capacitor. The first transistor includes a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer. The first semiconductor layer includes a first silicon semiconductor. The second transistor includes a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer. The second semiconductor layer includes a first oxide semiconductor. The capacitor includes a first electrode and a second electrode. The second electrode overlaps the first electrode and extends from the second semiconductor layer.

公开(公告)号：US20200373369A1

公开(公告)日：2020-11-26

申请号：US16988896

申请日：2020-08-10

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Sangmoo Choi ,  Wonkyu Kwak ,  Jinwoo Park ,  Dongsun Lee

IPC: H01L27/32 ,  H01L51/00 ,  G09G3/3233

Abstract: A display apparatus includes a substrate including a display area; a first thin film transistor arranged on the display area of the substrate and having a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer by a first gate insulating layer; a second thin film transistor arranged on the display area of the substrate and having a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer; and a storage capacitor at least partially overlapping the first thin film transistor and having a lower electrode and an upper electrode, wherein the second semiconductor layer and one of the lower electrode and the upper electrode are arranged on a same layer.

公开(公告)号：US10665657B2

公开(公告)日：2020-05-26

申请号：US16275192

申请日：2019-02-13

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Kiwook Kim ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

Abstract: A display apparatus may include a first transistor, a second transistor, and a capacitor. The first transistor includes a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer. The first semiconductor layer includes a first silicon semiconductor. The second transistor includes a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer. The second semiconductor layer includes a first oxide semiconductor. The capacitor includes a first electrode and a second electrode. The second electrode overlaps the first electrode and extends from the second semiconductor layer.

公开(公告)号：US20190288048A1

公开(公告)日：2019-09-19

申请号：US16352262

申请日：2019-03-13

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Sangmoo Choi ,  Wonkyu Kwak ,  Jinwoo Park ,  Dongsun Lee

IPC: H01L27/32 ,  G09G3/3233 ,  H01L51/00

Abstract: A display apparatus includes a substrate including a display area; a first thin film transistor arranged on the display area of the substrate and having a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer by a first gate insulating layer; a second thin film transistor arranged on the display area of the substrate and having a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer; and a storage capacitor at least partially overlapping the first thin film transistor and having a lower electrode and an upper electrode, wherein the second semiconductor layer and one of the lower electrode and the upper electrode are arranged on a same layer.

公开(公告)号：US12256614B2

公开(公告)日：2025-03-18

申请号：US18163966

申请日：2023-02-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyunchol Bang ,  Chulkyu Kang ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H10K59/131 ,  H01L27/12 ,  H10K59/121 ,  H10K59/124 ,  H10K59/126

Abstract: A display apparatus includes a first transistor, a first data line, a second data line, a driving voltage line, and a first insulating layer. The first transistor includes a first semiconductor layer and a first gate electrode. The first semiconductor layer includes a source region and a drain region. The first data line is disposed at a left side of the first transistor, and the second data line is disposed at a right side of the first transistor. The driving voltage line at least partially overlaps the first data line and the second data line. The first insulating layer is disposed between the first data line and the driving voltage line and between the second data line and the driving voltage line.

公开(公告)号：US20250072218A1

公开(公告)日：2025-02-27

申请号：US18942776

申请日：2024-11-11

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Kiwook Kim ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H10K59/121 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

Abstract: A display apparatus may include a first transistor, a second transistor, and a capacitor. The first transistor includes a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer. The first semiconductor layer includes a first silicon semiconductor. The second transistor includes a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer. The second semiconductor layer includes a first oxide semiconductor. The capacitor includes a first electrode and a second electrode. The second electrode overlaps the first electrode and extends from the second semiconductor layer.

公开(公告)号：US20230189593A1

公开(公告)日：2023-06-15

申请号：US18163966

申请日：2023-02-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： HYUNCHOL BANG ,  Chulkyu Kang ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H10K59/131 ,  H01L27/12 ,  H10K59/126 ,  H10K59/121 ,  H10K59/124

CPC classification number: H10K59/131 ,  H01L27/124 ,  H10K59/126 ,  H10K59/1216 ,  H10K59/124

Abstract: A display apparatus includes a first transistor, a first data line, a second data line, a driving voltage line, and a first insulating layer. The first transistor includes a first semiconductor layer and a first gate electrode. The first semiconductor layer includes a source region and a drain region. The first data line is disposed at a left side of the first transistor, and the second data line is disposed at a right side of the first transistor. The driving voltage line at least partially overlaps the first data line and the second data line. The first insulating layer is disposed between the first data line and the driving voltage line and between the second data line and the driving voltage line.