公开(公告)号：US20180203537A1

公开(公告)日：2018-07-19

申请号：US15715590

申请日：2017-09-26

Applicant: Samsung Display Co., Ltd.

Inventor： KEUNWOO KIM ,  SOOYOUNG PARK ,  JOONGHYUN PARK

IPC: G06F3/042 ,  G06F3/041

CPC classification number: G06F3/042 ,  G06F3/0412 ,  H01L27/1443

Abstract: A photo sensor pixel includes a pixel circuit including a driving transistor, a switching transistor having a double gate structure and a photo sensing transistor connected in series with the switching transistor. The pixel circuit drives a light emitting element therein based on a data voltage provided thereto through a data line, the switching transistor includes a top gate electrode and a bottom gate electrode, which are connected to different gate lines, respectively, and the photo sensing transistor senses incident light.