公开(公告)号：US20170336547A1

公开(公告)日：2017-11-23

申请号：US15594645

申请日：2017-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： SEUNG-WON PARK ,  TAEWOO KIM ,  LEI XIE ,  DAEHWAN JANG ,  DAE-YOUNG LEE ,  GUGRAE JO

IPC: G02B5/30 ,  G03F7/00 ,  G03F1/80 ,  G03F1/60 ,  H01L27/12 ,  G02F1/1335

CPC classification number: G03F7/0002 ,  G02B5/00 ,  G02B5/3058 ,  G02F1/00 ,  G02F1/133528 ,  G02F2001/133548 ,  G03F1/60 ,  G03F1/80 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1259

Abstract: An imprint lithography method includes forming a first imprint pattern on a substrate in a first area and a third area, wherein the third area is spaced apart from the first area, forming a first resist pattern on the substrate on a second area, wherein the second area is adjacent the first and third areas, forming a first pattern in the first and third areas by etching an element under the first imprint pattern using the first imprint pattern and the first resist pattern as an etch barrier, forming a second imprint pattern on the substrate in a second area, forming a second resist pattern on the substrate on the first area and the third area, and forming a second pattern in the second area by etching an element under the second imprint pattern using the second imprint pattern and the second resist pattern as an etch barrier.