公开(公告)号：US11631727B2

公开(公告)日：2023-04-18

申请号：US17134595

申请日：2020-12-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim ,  Taewook Kang ,  Doona Kim ,  Bummo Sung ,  Dokyeong Lee ,  Jaehwan Chu

IPC: H01L29/08 ,  H01L27/32 ,  H01L29/786

Abstract: A thin-film transistor substrate includes a semiconductor layer disposed on a substrate, a gate insulating layer disposed on the semiconductor layer, a first electrode that at least partly overlaps the semiconductor layer, wherein the gate insulating layer is disposed between the first electrode and the semiconductor layer, a plurality of thin-film layers disposed on the first electrode, and a second electrode that at least partly overlaps the first electrode, wherein the plurality of thin-film layers are disposed between the second electrode and the first electrode, wherein at least one of the plurality of thin-film layers includes amorphous silicon.

公开(公告)号：US11974474B2

公开(公告)日：2024-04-30

申请号：US17158362

申请日：2021-01-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaehwan Chu ,  Keunwoo Kim ,  Taewook Kang ,  Doona Kim ,  Sangsub Kim ,  Bummo Sung ,  Dokyeong Lee ,  Yongsu Lee

IPC: H01L27/32 ,  G09G3/3233 ,  H10K59/131

CPC classification number: H10K59/131 ,  G09G3/3233

Abstract: An organic light-emitting display apparatus includes an organic light-emitting diode, a driving transistor configured to control an amount of electric current flowing to the organic light-emitting diode from a power line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to first and second compensation gate electrodes of the compensation transistor, and a gate insulating layer between the compensation gate electrodes and a compensation active region of a compensation transistor. A layer structure of the gate insulating layer between the first compensation gate electrode and the compensation active region is different from a layer structure of the gate insulating layer between the second compensation gate electrode and the compensation active region.

公开(公告)号：US12120919B2

公开(公告)日：2024-10-15

申请号：US17679691

申请日：2022-02-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jaehwan Chu ,  Meejae Kang ,  Keunwoo Kim ,  Doona Kim ,  Sangsub Kim ,  Hanbit Kim ,  Dokyeong Lee ,  Yongsu Lee

IPC: H10K59/12 ,  H10K59/121

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/1201

Abstract: A method of manufacturing a display apparatus includes forming a first photosensitive pattern and a second photosensitive pattern of different thicknesses on an active layer; forming a driving semiconductor layer and a compensation semiconductor layer using the first photosensitive pattern and the second photosensitive pattern as masks to etch the active layer; exposing an upper surface of the driving semiconductor layer by etching the first photosensitive pattern and forming a third photosensitive pattern by etching at least a portion of the second photosensitive pattern; forming a first insulating layer on the driving semiconductor layer and the third photosensitive pattern; exposing an upper surface of the compensation semiconductor layer by stripping the third photosensitive pattern; and forming a second insulating layer on the first insulating layer and the compensation semiconductor layer.

公开(公告)号：US11455952B2

公开(公告)日：2022-09-27

申请号：US17084142

申请日：2020-10-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim ,  Doona Kim ,  Sangsub Kim ,  Dokyeong Lee ,  Jaehwan Chu

IPC: G09G3/3233 ,  H01L51/00 ,  H01L27/32

Abstract: A display apparatus includes a first thin-film transistor including a semiconductor layer arranged on a substrate, a driving gate electrode arranged on the semiconductor layer, and a first electrode arranged between the substrate and the semiconductor layer, a second thin-film transistor transmitting a data signal received through a data line to the first thin-film transistor according to a first scan signal received through a first scan line, and a third thin-film transistor transmitting a first voltage to the first electrode according to a second scan signal received through a second scan line.

公开(公告)号：US20210288123A1

公开(公告)日：2021-09-16

申请号：US17134595

申请日：2020-12-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim ,  Taewook Kang ,  Doona Kim ,  Bummo Sung ,  Dokyeong Lee ,  Jaehwan Chu

IPC: H01L27/32 ,  H01L29/786

Abstract: A thin-film transistor substrate includes a semiconductor layer disposed on a substrate, a gate insulating layer disposed on the semiconductor layer, a first electrode that at least partly overlaps the semiconductor layer, wherein the gate insulating layer is disposed between the first electrode and the semiconductor layer, a plurality of thin-film layers disposed on the first electrode, and a second electrode that at least partly overlaps the first electrode, wherein the plurality of thin-film layers are disposed between the second electrode and the first electrode, wherein at least one of the plurality of thin-film layers includes amorphous silicon.