公开(公告)号：US20220406825A1

公开(公告)日：2022-12-22

申请号：US17664863

申请日：2022-05-24

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： YOUNGGU JIN ,  YOUNGSUN OH

IPC: H01L27/146

Abstract: An image sensor includes a pixel isolation structure in a semiconductor substrate. The pixel isolation structure defines a plurality of pixel regions, a photoelectric conversion region in the semiconductor substrate on each of the pixel regions, a floating diffusion region in the semiconductor substrate and spaced apart from the photoelectric conversion region. A transfer gate electrode is disposed between the photoelectric conversion region and the floating diffusion region on each of the pixel regions. A dielectric layer is disposed on the semiconductor substrate and covers the transfer gate electrode. A plurality of active patterns spaced apart from each other is disposed on a top surface of the dielectric layer. A plurality of pixel transistors is disposed on corresponding active patterns. In a plan view, at least one of the active patterns overlaps a portion of the pixel isolation structure.

公开(公告)号：US20210134872A1

公开(公告)日：2021-05-06

申请号：US16865618

申请日：2020-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MUNHWAN KIM ,  YOUNGSUN OH

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/355

Abstract: An image sensor includes unit pixels of a first pixel group sharing a first floating diffusion region and associated with a single color filter, and unit pixels of a second pixel group sharing a second floating diffusion region and associated with the single color filter. Control logic may generate an image by obtaining capacitance having a first value from the first floating diffusion region at a first time, and obtaining capacitance having a second value different from the first value from the second floating diffusion region at a second time following the first time. The first pixel group and the second pixel s group have different sensitivity levels.