公开(公告)号：US20190273187A1

公开(公告)日：2019-09-05

申请号：US16028969

申请日：2018-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Ha Yeong SON ,  Young Sub SHIN

IPC: H01L33/46 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/40

Abstract: Provided is a semiconductor light emitting device which includes: a light emitting structure including a plurality of semiconductor layers and configured to generate and emit light to an outside of the light emitting structure; a transparent electrode layer disposed on the light emitting structure; a transparent protective layer disposed on the transparent electrode layer; a distributed Bragg reflector (DBR) layer disposed on the transparent protective layer and covering at least a part of the transparent electrode layer; and at least one electrode pad connected to the transparent electrode layer through a hole or via.

公开(公告)号：US20190074324A1

公开(公告)日：2019-03-07

申请号：US15955894

申请日：2018-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Yoon KIM ,  Young Sub SHIN

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/58 ,  H01L27/12 ,  H01L33/00

Abstract: A display device including pixels respectively containing a plurality of subpixels, the display device comprises: a light emitting diode (LED) array including a plurality of LED cells, the plurality of LED cells provided in the plurality of subpixels, the plurality of LED cells configured to emit light having substantially the same wavelength, each of the plurality of LED cells having a first surface and a second surface; thin-film transistor (TFT) circuitry including a plurality of TFT cells, each of the plurality of TFT cells disposed on the first surface of an LED cell of the plurality of LED cells and including source and drain regions and a gate electrode disposed between the source and drain regions; a wavelength conversion pattern disposed on the second surface of an LED cell of the plurality of LED cells, the wavelength conversion pattern including a composite of a quantum dot and/or a polymer, the quantum dot configured to emit different colors of light from colors of light emitted from other quantum dots of other wavelength conversion patterns; and a light blocking wall disposed between two of the plurality of subpixels including the plurality of LED cells and between wavelength conversion patterns to separate the plurality of subpixels.

公开(公告)号：US20180040768A1

公开(公告)日：2018-02-08

申请号：US15438876

申请日：2017-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shiyoung LEE ,  Sun Hyun OH ,  Sung Jun PARK ,  Young Sub SHIN ,  Kyoyoung AHN ,  Chi-yoon LEE

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32

Abstract: A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a substrate; a first conductive semiconductor layer on one surface of the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a plurality of protrusions on the second conductive semiconductor layer, the plurality of protrusions including an undoped semiconductor material, wherein an uneven complex surface structure including an unevenness that is a smaller size than a protrusion is formed in the second conductive semiconductor layer and is provided between the plurality of protrusions.