公开(公告)号：US10373831B2

公开(公告)日：2019-08-06

申请号：US15651068

申请日：2017-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-won Yu ,  Hyun-suk Lee ,  Ji-woon Park ,  Gi-hee Cho ,  Hee-sook Park ,  Woong-hee Sohn

IPC: C23C16/455 ,  H01L21/205 ,  H01L21/54 ,  H01L21/67 ,  H01L21/677 ,  C23C16/04 ,  C23C16/44

Abstract: A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.