公开(公告)号：US20250156623A1

公开(公告)日：2025-05-15

申请号：US18661325

申请日：2024-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooyeon KWON ,  Seuonghoon Kang

IPC: G06F30/398 ,  G06F30/394 ,  G06F111/20 ,  H01L23/522 ,  H01L23/528

Abstract: A method of manufacturing a semiconductor integrated circuit including a first region and a remaining region excluding the first region is provided. The method includes: placing standard cells in the remaining region; generating a routing structure that connects the standard cells; placing sub-power tap cells in the first region based on a predefined design rule; and verifying whether the sub-power tap cells and the standard cells comply with the predefined design rule.