公开(公告)号：US20230307482A1

公开(公告)日：2023-09-28

申请号：US18094473

申请日：2023-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN ,  SEUNGHYUN LEE ,  YOUNGCHAN KIM

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14629 ,  H01L27/14636

Abstract: A CMOS image sensor includes: a substrate including a plurality of unit pixel regions. The substrate includes: a first surface configured to receive light; a second surface opposite to the first surface; a deep device isolation portion disposed in the substrate and configured to isolate the plurality of unit pixel regions from each other, wherein the deep device isolation portion extends from the first surface toward the second surface and has a first depth measured from the first surface; a photoelectric conversion portion formed in the substrate in each of the plurality of unit pixel regions; and a first vertical reflection structure disposed in each of the plurality of unit pixel regions of the substrate and surrounded by the deep device isolation portion in a plan view.