公开(公告)号：US20200013740A1

公开(公告)日：2020-01-09

申请号：US16283906

申请日：2019-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN-KUK BAE ,  Hyun-Soo Chung ,  Han-Sung Ryu ,  In-Young Lee ,  Chan-Ho Lee

IPC: H01L23/00

Abstract: A semiconductor chip includes a substrate. An electrode pad is disposed on the substrate. The electrode pad includes a low-k material layer. A first protection layer at least partially surrounds the electrode pad. The first protection layer includes a first opening at an upper portion thereof. A buffer pad is electrically connected to the electrode pad. A second protection layer at least partially surrounds the buffer pad. The second protection layer includes a second opening at an upper portion thereof. A pillar layer and a solder layer are sequentially stacked on the buffer pad. A thickness of the buffer pad is greater than a thickness of the electrode pad. A width of the first opening in a first direction parallel to an upper surface of the semiconductor substrate is equal to or greater than a width of the second opening in the first direction.