公开(公告)号：US20200075359A1

公开(公告)日：2020-03-05

申请号：US16376749

申请日：2019-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN WOO LEE ,  Yong Jun Choi ,  Seok Hoon Kim ,  Seung Min Shin ,  Ji Hoon Cha

IPC: H01L21/67

Abstract: A wet etching apparatus includes a process bath having an internal space configured to receive an etchant and having a support unit, on which a wafer is disposed to be in contact with the etchant. A laser unit is disposed above the process bath and is configured to direct a laser beam to the wafer and to heat the wafer thereby. An etchant supply unit is configured to supply the etchant to the internal space of the process bath.

公开(公告)号：US20220319878A1

公开(公告)日：2022-10-06

申请号：US17807374

申请日：2022-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN WOO LEE ,  YONG JUN CHOI ,  SEOK HOON KIM ,  SEUNG MIN SHIN ,  JI HOON CHA

IPC: H01L21/67

Abstract: A wet etching apparatus includes a process bath having an internal space configured to receive an etchant and having a support unit, on which a wafer is disposed to be in contact with the etchant. A laser unit is disposed above the process bath and is configured to direct a laser beam to the wafer and to heat the wafer thereby. An etchant supply unit is configured to supply the etchant to the internal space of the process bath.