公开(公告)号：US11989459B2

公开(公告)日：2024-05-21

申请号：US18073079

申请日：2022-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongjun Jin ,  Yongjae Lee ,  Seunghan Kim ,  Hyoungjoo Kim

IPC: G06F3/06 ,  G11C29/10 ,  G11C29/56

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0653 ,  G06F3/0673 ,  G11C29/10 ,  G11C29/56004

Abstract: A semiconductor memory device includes a test pattern data storage configured to store test write pattern data in response to a register write command and a register address and output test read pattern data in response to a test read command and a test pattern data selection signal during a test operation, a memory cell array including a plurality of memory cells and configured to generate read data, a read path unit configured to generate n read data, by serializing the read data, and a test read data generation unit configured to generate n test read data, by comparing the test read pattern data with each of the n read data, generated at a first data rate, and generate the n test read data, at a second data rate lower than the first data rate, during the test operation.

公开(公告)号：US11520528B2

公开(公告)日：2022-12-06

申请号：US17375168

申请日：2021-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongjun Jin ,  Yongjae Lee ,  Seunghan Kim ,  Hyoungjoo Kim

IPC: G06F3/06 ,  G11C29/56 ,  G11C29/10

Abstract: A semiconductor memory device includes a test pattern data storage configured to store test write pattern data in response to a register write command and a register address and output test read pattern data in response to a test read command and a test pattern data selection signal during a test operation, a memory cell array including a plurality of memory cells and configured to generate read data, a read path unit configured to generate n read data, by serializing the read data, and a test read data generation unit configured to generate n test read data, by comparing the test read pattern data with each of the n read data, generated at a first data rate, and generate the n test read data, at a second data rate lower than the first data rate, during the test operation.