公开(公告)号：US20160365279A1

公开(公告)日：2016-12-15

申请号：US15060641

申请日：2016-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jamin KOO ,  Youngseok KIM ,  Kongsoo LEE ,  Goeun BAE

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76895 ,  H01L21/28035 ,  H01L21/288 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/53271 ,  H01L27/10888

Abstract: Provided is a method of fabricating a semiconductor device, the method including forming interconnection structures extending parallel to each other on a substrate; performing a coating process and forming a liquid state silicon source material layer filling an area between the interconnection structures; performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer; and crystallizing the amorphous silicon layer and forming contact plugs.

Abstract translation: 提供一种制造半导体器件的方法，该方法包括在衬底上形成彼此平行延伸的互连结构; 执行涂覆工艺并形成填充所述互连结构之间的区域的液态硅源材料层; 进行第一退火处理，固化液态硅源材料层，形成非晶硅层; 并使非晶硅层结晶并形成接触塞。