公开(公告)号：US20220336327A1

公开(公告)日：2022-10-20

申请号：US17808533

申请日：2022-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNJI KIM ,  Sungdong CHO ,  Kwangwuk PARK ,  Sangjun PARK ,  Daesuk LEE ,  Hakseung LEE

IPC: H01L23/48 ,  H01L25/18 ,  H01L21/768

Abstract: A semiconductor device includes a semiconductor substrate having an active surface on which semiconductor elements are provided. An interlayer insulating film is provided on the semiconductor substrate. A first via structure passes through the semiconductor substrate. The first via structure has a first diameter. A second via structure passes through the semiconductor substrate. The second via structure has a second diameter that is greater than the first diameter. The first via structure has a step portion that is in contact with the interlayer insulating film.