公开(公告)号：US20230113319A1

公开(公告)日：2023-04-13

申请号：US17961635

申请日：2022-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bonhong GU ,  Minwoo KIM ,  Jinyong KIM ,  Hyodong BAN ,  Jungwoo SONG ,  Daegwon HA

IPC: H01L27/108

Abstract: A semiconductor device includes conductive patterns, an insulating pattern between the conductive patterns, an insulating etch stop layer on the conductive patterns and the insulating pattern, a capacitor including first electrodes in contact with the first conductive patterns, a second capacitor electrode, and a dielectric between the first and second capacitor electrodes, an insulating structure covering the capacitor and the insulating etch stop layer, and a peripheral contact plug through the insulating structure and the insulating etch stop layer and including first through fifth plug regions stacked on top of each other, at least a portion of a side surface of the fourth plug region having an inclination angle different from inclinations angles of the third and fifth plug regions, and a vertical thickness of the fifth plug region being at least twice as great as a sum of vertical thicknesses of the first to fourth plug regions.