公开(公告)号：US20160190167A1

公开(公告)日：2016-06-30

申请号：US15061291

申请日：2016-03-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Sun NA ,  Ju-Hee LEE ,  Won-Hee LEE ,  Ho-Kyoon KWON

IPC: H01L27/12 ,  H01L29/786

Abstract: Embodiments of the present disclosure provide a thin-film transistor (TFT) panel structured to prevent the deterioration of image quality due to the luminance change of backlight. According to an embodiment, the TFT panel includes: an insulating substrate; a first gate line and a first data line which are formed on the insulating substrate to be insulated from each other and cross each other; a first subpixel electrode which is formed on the insulating substrate and connected to the first gate line and the first data line by a first TFT; a second subpixel electrode which is formed on the insulating substrate and separated from the first subpixel electrode; a connecting electrode which is directly connected to any one of the first and second subpixel electrodes and capacitively coupled to the other one of the first and second subpixel electrodes; a semiconductor pattern which is formed between the connecting electrode and the insulating substrate; and a light-shielding pattern which is formed between the semiconductor pattern and the insulating substrate, is overlapped by the connecting electrode, and blocks light.

Abstract translation: 本公开的实施例提供了一种薄膜晶体管（TFT）面板，其被构造为防止由于背光的亮度变化引起的图像质量的劣化。 根据实施例，TFT面板包括：绝缘基板; 第一栅线和第一数据线，形成在绝缘基板上以彼此绝缘并彼此交叉; 第一子像素电极，其形成在所述绝缘基板上，并且通过第一TFT连接到所述第一栅极线和所述第一数据线; 第二子像素电极，其形成在所述绝缘基板上并与所述第一子像素电极分离; 连接电极，其直接连接到第一和第二子像素电极中的任一个并且电容耦合到第一和第二子像素电极中的另一个; 形成在所述连接电极和所述绝缘基板之间的半导体图案; 并且形成在半导体图案和绝缘基板之间的遮光图案被连接电极重叠，并且阻挡光。