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    Energy-filtering cathode lens microscopy instrument
    1.
    发明申请
    Energy-filtering cathode lens microscopy instrument 失效
    能量过滤阴极透镜显微镜仪器

    公开(公告)号：US20070200062A1

    公开(公告)日：2007-08-30

    申请号：US11364298

    申请日：2006-02-28

    Applicant: Rudolf Tromp

    Inventor： Rudolf Tromp

    IPC: H01J37/05 ,  H01J49/46 ,  H01J37/26 ,  G01N23/225 ,  G01N23/227

    CPC classification number: H01J37/05 ,  H01J37/252 ,  H01J2237/0458 ,  H01J2237/057 ,  H01J2237/2538 ,  H01J2237/2544

    Abstract: An energy filtering microscopy instrument is provided. An objective lens is disposed for reception of electrons in order to form an electron diffraction pattern in a backfocal plane of the objective lens. An entrance aperture disposed in the backfocal plane of the objective lens for filtering a slice of the electron diffraction pattern. A magnetic deflector has an entrance plane and an exit plane. The entrance aperture is disposed in the entrance plane. The magnetic deflector is disposed to receive the slice of the electron diffraction pattern and project an energy dispersed electron diffraction pattern to the exit plane. An exit aperture is disposed in the exit plane of the magnetic deflector for selection of desired electron energy of the energy dispersed electron diffraction pattern.

    Abstract translation: 提供能量过滤显微镜仪器。 为了在物镜的背面平面中形成电子衍射图案，设置物镜接收电子。 设置在物镜的背面平面中的入口孔，用于过滤电子衍射图案的切片。 导磁板具有入射面和出射面。 入口孔设置在入口平面中。 磁偏转器被设置为接收电子衍射图案的切片并将能量分散的电子衍射图案投射到出射平面。 出口孔布置在磁偏转器的出射平面中，用于选择能量分散的电子衍射图案的期望的电子能量。

    Method for Preparation of Flat Step-Free Silicon Carbide Surfaces
    2.
    发明申请
    Method for Preparation of Flat Step-Free Silicon Carbide Surfaces 失效
    平面无阶碳化硅表面的制备方法

    公开(公告)号：US20100065988A1

    公开(公告)日：2010-03-18

    申请号：US12212940

    申请日：2008-09-18

    Applicant: James B. Hannon ,  Rudolf Tromp

    Inventor： James B. Hannon ,  Rudolf Tromp

    IPC: B29C59/00

    CPC classification number: H01L21/02612 ,  H01L21/02378 ,  H01L21/02527 ,  H01L29/1608

    Abstract: Techniques for producing atomic step-free silicon carbide surfaces are provided. In one aspect, a method for eliminating atomic steps from a silicon carbide surface is provided. The method comprises the following step. The silicon carbide and a silicon-containing gas are contacted at a temperature, background pressure, and for a length of time sufficient to re-arrange the silicon carbide to an atomic step-free surface. The silicon carbide surface can be the top of a mesa or the bottom of a hole patterned in a silicon carbide wafer.

    Abstract translation: 提供了生产无原子级的碳化硅表面的技术。 一方面，提供了从碳化硅表面消除原子台阶的方法。 该方法包括以下步骤。 碳化硅和含硅气体在背景压力的温度下接触足够长的时间以将碳化硅重新排列到无原子无梯度的表面。 碳化硅表面可以是在碳化硅晶片中图案化的台面的顶部或孔的底部。

    Aberration-correcting cathode lens microscopy instrument
    4.
    发明申请
    Aberration-correcting cathode lens microscopy instrument 有权
    畸变校正阴极透镜显微镜仪器

    公开(公告)号：US20070200070A1

    公开(公告)日：2007-08-30

    申请号：US11364299

    申请日：2006-02-28

    Applicant: Rudolf Tromp

    Inventor： Rudolf Tromp

    IPC: H01J37/153 ,  G01N23/225 ,  G01N23/227 ,  H01J37/05 ,  H01J37/26 ,  H01J49/46

    CPC classification number: H01J37/153 ,  H01J37/05 ,  H01J37/252 ,  H01J37/295 ,  H01J2237/055 ,  H01J2237/1534 ,  H01J2237/2538 ,  H01J2237/2544

    Abstract: An aberration-correcting microscopy instrument is provided. The instrument has a first magnetic deflector disposed for reception of a first non-dispersed electron diffraction pattern. The first magnetic deflector is also configured for projection of a first energy dispersed electron diffraction pattern in an exit plane of the first magnetic deflector. The instrument also has an electrostatic lens disposed in the exit plane of a first magnetic deflector, as well as a second magnetic deflector substantially identical to the first magnetic deflector. The second magnetic deflector is disposed for reception of the first energy dispersed electron diffraction pattern from the electrostatic lens. The second magnetic deflector is also configured for projection of a second non-dispersed electron diffraction pattern in a first exit plane of the second magnetic deflector. The instrument also has an electron mirror configured for correction of one or more aberrations in the second non-dispersed electron diffraction pattern. The electron mirror is disposed for reflection of the second non-dispersed electron diffraction pattern to the second magnetic deflector for projection of a second energy dispersed electron diffraction pattern in a second exit plane of the second magnetic deflector.

    Abstract translation: 提供了一种像差校正显微镜仪器。 仪器具有设置用于接收第一非分散电子衍射图案的第一磁偏转器。 第一磁偏转器还被配置用于在第一磁偏转器的出射平面中投射第一能量分散电子衍射图案。 仪器还具有设置在第一磁偏转器的出射平面中的静电透镜以及与第一磁偏转器基本相同的第二磁偏转器。 第二磁偏转器被设置用于从静电透镜接收第一能量分散电子衍射图案。 第二磁偏转器还被配置用于在第二磁偏转器的第一出射平面中投射第二非分散电子衍射图案。 仪器还具有配置用于校正第二非分散电子衍射图案中的一个或多个像差的电子反射镜。 电子反射镜被设置用于将第二非分散电子衍射图案反射到第二磁偏转器，用于在第二磁偏转器的第二出射平面中投射第二能量分散电子衍射图案。

    Low-voltage transmission electron microscopy
    5.
    发明授权
    Low-voltage transmission electron microscopy 有权

    公开(公告)号：US08586919B1

    公开(公告)日：2013-11-19

    申请号：US13535980

    申请日：2012-06-28

    Applicant: Rudolf Tromp

    Inventor： Rudolf Tromp

    IPC: G01N23/00 ,  G21K7/00

    CPC classification number: G01N23/2251 ,  G01N2223/423 ,  H01J37/26 ,  H01J2237/24585 ,  H01J2237/2802

    Abstract: Embodiments of the invention relate to electron microscopy. Example embodiments relate to an apparatus including a first electron beam source, a second electron beam source, and a receiving unit. The first electron beam source is configured to provide a first low-voltage electron beam to a surface of a sample. The second electron beam source is configured to provide a second low-voltage electron beam to pass through the sample. The receiving unit is configured to analyze the first low-voltage electron beam, or the second low-voltage electron beam, or both the first and the second electron beam to obtain information about the sample.

    Method for preparation of flat step-free silicon carbide surfaces
    6.
    发明授权
    Method for preparation of flat step-free silicon carbide surfaces 失效
    平面无碳化硅表面的制备方法

    公开(公告)号：US08465799B2

    公开(公告)日：2013-06-18

    申请号：US12212940

    申请日：2008-09-18

    Applicant: James B. Hannon ,  Rudolf Tromp

    Inventor： James B. Hannon ,  Rudolf Tromp

    IPC: B05D5/06

    CPC classification number: H01L21/02612 ,  H01L21/02378 ,  H01L21/02527 ,  H01L29/1608

    Abstract: Techniques for producing atomic step-free silicon carbide surfaces are provided. In one aspect, a method for eliminating atomic steps from a silicon carbide surface is provided. The method comprises the following step. The silicon carbide and a silicon-containing gas are contacted at a temperature, background pressure, and for a length of time sufficient to re-arrange the silicon carbide to an atomic step-free surface. The silicon carbide surface can be the top of a mesa or the bottom of a hole patterned in a silicon carbide wafer.

    Abstract translation: 提供了生产无原子级的碳化硅表面的技术。 一方面，提供了从碳化硅表面消除原子台阶的方法。 该方法包括以下步骤。 碳化硅和含硅气体在背景压力的温度下接触足够长的时间以将碳化硅重新排列到无原子无梯度的表面。 碳化硅表面可以是在碳化硅晶片中图案化的台面的顶部或孔的底部。

    Low-voltage transmission electron microscopy
    9.
    发明授权
    Low-voltage transmission electron microscopy 有权
    低压透射电子显微镜

    公开(公告)号：US08586923B1

    公开(公告)日：2013-11-19

    申请号：US13528990

    申请日：2012-06-21

    Applicant: Rudolf Tromp

    Inventor： Rudolf Tromp

    IPC: G01N23/225 ,  G01N23/00 ,  G21K7/00

    CPC classification number: G01N23/2251 ,  G01N2223/423 ,  H01J37/26 ,  H01J2237/24585 ,  H01J2237/2802

    Abstract: Embodiments of the invention relate to electron microscopy. Example embodiments relate to an apparatus including a first electron beam source, a second electron beam source, and a receiving unit. The first electron beam source is configured to provide a first low-voltage electron beam to a surface of a sample. The second electron beam source is configured to provide a second low-voltage electron beam to pass through the sample. The receiving unit is configured to analyze the first low-voltage electron beam, or the second low-voltage electron beam, or both the first and the second electron beam to obtain information about the sample.

    Abstract translation: 本发明的实施例涉及电子显微镜。 示例性实施例涉及包括第一电子束源，第二电子束源和接收单元的装置。 第一电子束源被配置为向样品的表面提供第一低电压电子束。 第二电子束源被配置为提供第二低电压电子束以通过样品。 接收单元被配置为分析第一低电压电子束或第二低电压电子束，或者分析第一和第二电子束，以获得关于样品的信息。

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