公开(公告)号：US20240351905A1

公开(公告)日：2024-10-24

申请号：US18586784

申请日：2024-02-26

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Yong-Young NOH ,  Youjin REO ,  Ao LIU ,  Huihui ZHU

IPC: C01G19/00 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K10/46 ,  H10K71/16

CPC classification number: C01G19/006 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786 ,  H10K10/484 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2006/40 ,  H01L21/02521 ,  H01L21/02631 ,  H10K71/164

Abstract: Proposed are a semiconductor layer including Sn-based perovskite including a chloride-based compound and an iodine-based compound, a thin film transistor including the same, and a manufacturing method thereof. The semiconductor layer includes a perovskite complex, where the perovskite complex includes a Sn-based perovskite and an additive including at least one selected from the group consisting of a first additive and a second additive, the first additive includes at least one selected from the group consisting of a chloride-based compound and an acetate-based compound, and the second additive includes an iodide-based compound (iodide). Thus, a transistor, an environmentally friendly material free of Pb, having high charge mobility and being easily industrialized, can be provided.