公开(公告)号：US20250044698A1

公开(公告)日：2025-02-06

申请号：US18544920

申请日：2023-12-19

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Seok KIM ,  Sangyeop LEE

IPC: G03F7/12 ,  B41N1/24 ,  G03F7/00

Abstract: Provided are a new ultrathin film silicon shadow mask which is flexible, is reusable, and can be precisely aligned and manipulated through transfer printing, and a lithography method using the same. A thin thickness of a silicon shadow mask may intrinsically form a pattern having an enhanced resolution in a plane and a non-planar surface. Further, the silicon shadow mask may be formed on a substrate by metal deposition in addition to etching in a multi-layer configuration by a transfer printing technology based alignment method. Through such a method, a material in which patterning is impossible may be patterned through photolithography.