公开(公告)号：US20200319822A1

公开(公告)日：2020-10-08

申请号：US16431672

申请日：2019-06-04

Applicant: PHISON ELECTRONICS CORP.

Inventor： Che-Yueh Kuo ,  Wei-Jeng Wang

IPC: G06F3/06 ,  G06F12/06

Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory control method includes: determining a first management unit as a source block and reading valid data from a first continuous data unit in the first management unit according to first interleaving information and second interleaving information, wherein the first interleaving information reflects a total number of the first continuous data units in the first management unit, and the second interleaving information reflects a total number of second continuous data units in a second management unit; storing the valid data into a recycling block; and erasing the first management unit.

公开(公告)号：US11216334B1

公开(公告)日：2022-01-04

申请号：US17002783

申请日：2020-08-26

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei-Jeng Wang ,  Shao-Hung Lu

IPC: G06F11/10 ,  G06F13/28 ,  G06F11/30 ,  G06F11/16 ,  G06F3/06

Abstract: A data reading method is provided. The method includes: according to a first read command received from a host system, sending a first read command sequence, which is configured to instruct a reading of a plurality of physical units of the rewritable non-volatile memory module to obtain first data; identifying data stored in at least one first physical unit in the physical units as uncorrectable data according to the first data; according to a second command received from the host system, sending a second read command sequence, which is configured to instruct a reading of the physical units of the rewritable non-volatile memory module to obtain second data; generating response data corresponding to the second read command according to the second data and padding data, which is configured to replace the data read from the at least one first physical unit; and transmitting the response data to the host system.

公开(公告)号：US11036429B2

公开(公告)日：2021-06-15

申请号：US16431672

申请日：2019-06-04

Applicant: PHISON ELECTRONICS CORP.

Inventor： Che-Yueh Kuo ,  Wei-Jeng Wang

IPC: G06F3/06 ,  G06F12/06

Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory control method includes: determining a first management unit as a source block and reading valid data from a first continuous data unit in the first management unit according to first interleaving information and second interleaving information, wherein the first interleaving information reflects a total number of the first continuous data units in the first management unit, and the second interleaving information reflects a total number of second continuous data units in a second management unit; storing the valid data into a recycling block; and erasing the first management unit.