公开(公告)号：US11469264B2

公开(公告)日：2022-10-11

申请号：US16777027

申请日：2020-01-30

Applicant: OmniVision Technologies, Inc.

Inventor： Alireza Bonakdar ,  Shinn-Jhy Lian ,  Badrinath Padmanabhan

IPC: H01L27/146

Abstract: A flare-blocking image sensor includes large pixels and small pixels, a microlens, and an opaque element. The large pixels and small pixels form a first and second pixel array respectively, each having a pixel pitch Px and Py. The second pixel array is offset from the first pixel array by ½Px and ½Py. A first large pixel of the large pixels is between and collinear with a first and a second small pixel separated by √{square root over (Px2+Py2 )} in a first direction and each having a width W less than both pixel pitch Px and Py. The microlens is aligned with the first large pixel. The opaque element is between the first large pixel and the microlens and extends, in the first direction, less than ½(√{square root over (Px2+Py2)}−W) from the first small pixel toward the second small pixel. The opaque element has a width perpendicular to the first direction not exceeding width W.

公开(公告)号：US20210175378A1

公开(公告)日：2021-06-10

申请号：US16703542

申请日：2019-12-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Alireza Bonakdar ,  Shinn-Jhy Lian

IPC: H01L31/0232 ,  H01L31/0216 ,  H01L31/02 ,  G02B5/30 ,  H01L27/146

Abstract: A light sensor includes a photodiode, interlayer dielectric layer and plurality of metal layers. A polarizer is disposed in the plurality of metal layers. The photodiode is coupled to generate charge in response to incident light directed through a first side of the semiconductor layer. The polarizer includes a first metal grid formed with a first metal layer and a second metal grid formed with a third metal layer. The second metal grid is stacked with the first metal grid such that the first and second metal grids are disposed above and aligned with the photodiode. The photodiode is optically coupled to receive incident light through the first and second metal grids of the polarizer and through the first side of the semiconductor layer.

公开(公告)号：US12136637B2

公开(公告)日：2024-11-05

申请号：US17963015

申请日：2022-10-10

Applicant: OmniVision Technologies, Inc.

Inventor： Alireza Bonakdar ,  Shinn-Jhy Lian ,  Badrinath Padmanabhan

IPC: H01L27/146

Abstract: A flare-blocking image sensor includes large pixels and small pixels, a microlens, and an opaque element. The large pixels and small pixels form a first and second pixel array respectively, each having a pixel pitch Px and Py. The second pixel array is offset from the first pixel array by ½Px and ½Py. A first large pixel of the large pixels is between and collinear with a first and a second small pixel separated by √{square root over (Px2+Py2)} in a first direction and each having a width W less than both pixel pitch Px and Py. The microlens is aligned with the first large pixel. The opaque element is between the first large pixel and the microlens and extends, in the first direction, less than 1 2 ⁢ ( P x 2 + P y 2 - W ) from the first small pixel toward the second small pixel. The opaque element has a width perpendicular to the first direction not exceeding width W.

公开(公告)号：US11515437B2

公开(公告)日：2022-11-29

申请号：US16703542

申请日：2019-12-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Alireza Bonakdar ,  Shinn-Jhy Lian

IPC: H01L31/0232 ,  H01L31/0216 ,  H01L31/02 ,  G02B5/30 ,  H01L27/146

Abstract: A light sensor includes a photodiode, interlayer dielectric layer and plurality of metal layers. A polarizer is disposed in the plurality of metal layers. The photodiode is coupled to generate charge in response to incident light directed through a first side of the semiconductor layer. The polarizer includes a first metal grid formed with a first metal layer and a second metal grid formed with a third metal layer. The second metal grid is stacked with the first metal grid such that the first and second metal grids are disposed above and aligned with the photodiode. The photodiode is optically coupled to receive incident light through the first and second metal grids of the polarizer and through the first side of the semiconductor layer.