公开(公告)号：US12034277B2

公开(公告)日：2024-07-09

申请号：US18326465

申请日：2023-05-31

Applicant: Lumentum Operations LLC

Inventor： Ting Liu ,  Xing Li ,  Hery Djie

IPC: H01S5/34

CPC classification number: H01S5/3407 ,  H01S5/3425

Abstract: A semiconductor layer structure may include a substrate, a blocking layer disposed over the substrate, and one or more epitaxial layers disposed over the blocking layer. The blocking layer may have a thickness of between 50 nanometers (nm) and 4000 nm. The blocking layer may be configured to suppress defects from the substrate propagating to the one or more epitaxial layers. The one or more epitaxial layers may include a quantum-well layer that includes a quantum-well intermixing region formed using a high temperature treatment.

公开(公告)号：US11670913B2

公开(公告)日：2023-06-06

申请号：US16947876

申请日：2020-08-21

Applicant: Lumentum Operations LLC

Inventor： Ting Liu ,  Xing Li ,  Hery Djie

IPC: H01S5/34

CPC classification number: H01S5/3407 ,  H01S5/3425

Abstract: A semiconductor layer structure may include a substrate, a blocking layer disposed over the substrate, and one or more epitaxial layers disposed over the blocking layer. The blocking layer may have a thickness of between 50 nanometers (nm) and 4000 nm. The blocking layer may be configured to suppress defects from the substrate propagating to the one or more epitaxial layers. The one or more epitaxial layers may include a quantum-well layer that includes a quantum-well intermixing region formed using a high temperature treatment.