公开(公告)号：US11169327B2

公开(公告)日：2021-11-09

申请号：US16984808

申请日：2020-08-04

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Kyoungsik Yu ,  Youngho Jung

IPC: G02B6/132 ,  H01L21/50 ,  G02B6/12 ,  G02B6/122

Abstract: The method for manufacturing the heterojunction circuit according to one embodiment of the present disclosure comprises depositing a first electrode on at least a part of a waveguide, moving a semiconductor comprising a second electrode at a lower end thereof onto the first electrode, and depositing a third electrode on an upper end of the semiconductor, wherein the waveguide and the semiconductor comprise different materials. Additionally, the moving step further comprises generating microbubbles by supplying heat to at least a part of the semiconductor, moving the semiconductor on the first electrode by moving the generated microbubbles, and removing the microbubbles by positioning the semiconductor on the first electrode.

公开(公告)号：US10768367B2

公开(公告)日：2020-09-08

申请号：US16366534

申请日：2019-03-27

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Kyoungsik Yu ,  Youngho Jung

IPC: G02B6/132 ,  H01L21/50 ,  G02B6/12 ,  G02B6/122

Abstract: The method for manufacturing the heterojunction circuit according to one embodiment of the present disclosure comprises depositing a first electrode on at least a part of a waveguide, moving a semiconductor comprising a second electrode at a lower end thereof onto the first electrode, and depositing a third electrode on an upper end of the semiconductor, wherein the waveguide and the semiconductor comprise different materials. Additionally, the moving step further comprises generating microbubbles by supplying heat to at least a part of the semiconductor, moving the semiconductor on the first electrode by moving the generated microbubbles, and removing the microbubbles by positioning the semiconductor on the first electrode.