公开(公告)号：US20220012576A1

公开(公告)日：2022-01-13

申请号：US17371364

申请日：2021-07-09

Applicant: Korea Advanced Institute Of Science And Technology

Inventor： Yang-Kyu CHOI ,  Joon-Kyu HAN ,  Geon-Beom LEE ,  Jinki KIM

IPC: G06N3/063 ,  H01L29/872

Abstract: A neuromorphic synaptic device based on a charge trap and having linearity and symmetricity improved by using a schottky junction and a neuromorphic system using the same are provided. The neuromorphic synaptic device includes a body layer formed on a semiconductor substrate, a source and a drain formed at a left side and a right side, or an upper side and a lower side of the body layer, a contact metal to form a schottky junction by making contact with the source and the drain, a gate insulating layer formed on the body layer, and including an oxide layer and a charge storage layer, and a gate formed on the gate insulating layer.