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公开(公告)号:US20200211879A1
公开(公告)日:2020-07-02
申请号:US16727248
申请日:2019-12-26
Inventor: Keon Jae LEE , Han Eol LEE , Tae Jin KIM , Jung Ho SHIN , Sang Hyun PARK
IPC: H01L21/677 , H01L21/683 , H01L33/62 , B65G47/91
Abstract: The present disclosure provides a method for transfer and assembly of RGB micro-light-emitting diodes using vacuum suction force whereby the vacuum state of micrometer-sized adsorption holes to which micro-light-emitting diodes formed on a mother substrate or a temporary substrate are bonded is controlled selectively, so that only the micro-light-emitting diode devices desired to be detached from the mother substrate or the temporary substrate are detached from the mother substrate or the temporary substrate using vacuum suction force and then transferred to a target substrate
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公开(公告)号:US20170205364A1
公开(公告)日:2017-07-20
申请号:US15219429
申请日:2016-07-26
Inventor: Sang Hyun PARK , Chung-Yul YOO , Hong Soo KIM , Min Soo SUH , Dong Kook KIM , Byung jin CHO
IPC: G01N25/18
CPC classification number: G01N25/18
Abstract: Disclosed herein are a high-temperature structure for measuring properties of a curved thermoelectric device, which is capable of precisely measuring the properties of a medium-temperature curved thermoelectric device that is applied to a tube-type waste heat source and is used in research, and a system and a method for measuring the properties using the same. The high-temperature structure may include a plurality of rod-shaped cartridge heaters, and a heating element having a surface that is a curved surface coming into contact with a lower end of the curved thermoelectric device, having a plurality of holes for accommodating the plurality of cartridge heaters, and directly heating the lower end of the curved thermoelectric device.
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公开(公告)号:US20180294400A1
公开(公告)日:2018-10-11
申请号:US15695006
申请日:2017-09-05
Inventor: Sang Hyun PARK , Chung-Yul YOO , Young Hwan JIN , Hana YOON , Byung jin CHO
CPC classification number: H01L37/025 , B32B15/043 , B32B2038/0092 , B32B2309/105 , H01L35/14
Abstract: This invention relates to a metalized skutterudite thermoelectric material having improved long-term stability and a method of manufacturing the same, wherein the skutterudite thermoelectric material is metalized with a multilayer structure including a Ti layer for preventing the diffusion of the skutterudite thermoelectric material and a Fe—Ni layer for preventing an increase in the thickness of an intermetallic compound layer, whereby the performance of the skutterudite thermoelectric material does not deteriorate due to diffusion and formation of the intermetallic compound even upon long-term use, thus exhibiting improved stability of use, and moreover, the lifetime and stability of a thermoelectric power generation module using the skutterudite thermoelectric material can be increased, whereby the power generation efficiency of the thermoelectric power generation module can be increased in the long term.
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