Modulated reflectance measurement system with multiple wavelengths
    1.
    发明授权
    Modulated reflectance measurement system with multiple wavelengths 有权
    多波长调制反射测量系统

    公开(公告)号:US07423757B2

    公开(公告)日:2008-09-09

    申请号:US11492583

    申请日:2006-07-25

    Abstract: A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuses the laser outputs on a sample. Reflected energy returns through objective and is redirected by a beam splitter to a detector. A lock-in amplifier converts the output of the detector to produce quadrature (Q) and in-phase (I) signals for analysis. A Processor uses the Q and/or I signals to analyze the sample. By changing the number of lasers used as pump or probe beam sources, the measurement system can be optimized to measure a range of different samples types.

    Abstract translation: 调制反射测量系统包括三个基于单色二极管的激光器。 每个激光器可以作为探测光束或作为泵浦光源操作。 使用一系列反射镜和分束器将激光输出重定向到达物镜。 物镜将激光输出聚焦在样品上。 反射能量通过目标返回,并被分束器重定向到检测器。 锁定放大器转换检测器的输出以产生正交(Q)和同相(I)信号用于分析。 处理器使用Q和/或I信号来分析样本。 通过改变用作泵浦或探针光束源的激光器的数量,可以优化测量系统以测量不同样品类型的范围。

    Methods for depth profiling in semiconductors using modulated optical reflectance technology
    2.
    发明申请
    Methods for depth profiling in semiconductors using modulated optical reflectance technology 有权
    采用调制光学反射技术的半导体深度剖面方法

    公开(公告)号:US20080151247A1

    公开(公告)日:2008-06-26

    申请号:US11998118

    申请日:2007-11-28

    CPC classification number: G01N21/1717 G01N2021/1719 G01N2021/178

    Abstract: Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.

    Abstract translation: 使用调制光学反射率(MOR)测量公开了获得掺杂剂和损伤深度分布信息的方法。 在一个方面,使用从诸如结深度,结突起和掺杂剂浓度的各种测量获得的信息来构建深度分布。 另一方面,开发了一个完整的理论模型。 实际测量被馈送到模型。 使用迭代方法,将实际测量与从模型计算的理论测量值进行比较,以确定实际深度分布。

    Global shape definition method for scatterometry

    公开(公告)号:US07145664B2

    公开(公告)日:2006-12-05

    申请号:US10784619

    申请日:2004-02-23

    CPC classification number: G01N21/4788

    Abstract: A method for modeling samples includes the use of control points to define lines profiles and other geometric shapes. Each control point used within a model influences a shape within the model. Typically, the control points are used in a connect-the-dots fashion where a set of dots defines the outline or profile of a shape. The layers within the sample are typically modeled independently of the shape defined using the control points. The overall result is to minimize the number of parameters used to model shapes while maintaining the accuracy of the resulting scatterometry models.

    Method for determining ion concentration and energy of shallow junction implants

    公开(公告)号:US07099007B2

    公开(公告)日:2006-08-29

    申请号:US11002175

    申请日:2004-12-02

    CPC classification number: G01N21/211 G01N21/171

    Abstract: A method is disclosed for measuring the dose and energy level of ion implants forming a shallow junction in a semiconductor sample. In the method, two independent measurements of the sample are made. The first measurement monitors the response of the sample to periodic excitation. In the illustrated embodiment, the modulated optical reflectivity of a reflected probe beam is monitored to provide information related to the generation of thermal and/or plasma waves in the sample. A second spectroscopic measurement is also performed. This measurement could be either a spectroscopic reflectometry measurement or a spectroscopic ellipsometry measurement. The data from the two measurements are combined in a manner to yield information about both the dose (concentration) of the dopants as well as the energy used to inject the dopants in the semiconductor lattice. The method will useful in controlling the formation of shallow junctions.

    Optical metrology tool having improved contrast

    公开(公告)号:US07050162B2

    公开(公告)日:2006-05-23

    申请号:US10156504

    申请日:2002-05-28

    CPC classification number: G01N21/956 G01N21/9501 G01N2021/213

    Abstract: The subject invention relates to broadband optical metrology tools for performing measurements of patterned thin films on semiconductor integrated circuits. Particularly a family of optical designs for broadband optical systems wherein the ratio of illumination system to collection system numerical apertures is less than 1. System performance is enhanced through selection and control of the optical system partial coherence; this is accomplished through installation of beam-control apertures within the illumination and collection optical systems. The invention is broadly applicable to a large class of broadband optical wafer metrology techniques including spectrophotometry, spectroscopic reflectometry, spectroscopic ellipsometry and spectroscopic scatterometry.

    Detector configurations for optical metrology

    公开(公告)号:US06995842B2

    公开(公告)日:2006-02-07

    申请号:US10985494

    申请日:2004-11-10

    Applicant: Jon Opsal

    Inventor: Jon Opsal

    CPC classification number: G01B11/0641 G01J4/04 G01N21/211 G01N2021/213

    Abstract: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.

    Systems and methods for immersion metrology
    10.
    发明申请
    Systems and methods for immersion metrology 有权
    沉浸计量系统和方法

    公开(公告)号:US20050195412A1

    公开(公告)日:2005-09-08

    申请号:US10794094

    申请日:2004-03-04

    Applicant: Jon Opsal

    Inventor: Jon Opsal

    CPC classification number: G01N21/211 G01B11/0641 G01B2210/56

    Abstract: Fluid immersion technology can be utilized to increase the resolution and angular range of existing metrology systems. An immersion fluid placed between the metrology optics and the sample can reduce the refraction at the sample interface, thereby decreasing the spot size of the beam on a feature of the sample while simultaneously increasing the angular range of the system. The decreased spot size, in combination with an increased angular spread, allows an existing metrology system to measure parameters of a sample, such as a semiconductor or microelectronic device, with improved resolution and without expensive and/or complex changes to the mechanics of the metrology system.

    Abstract translation: 流体浸没技术可用于提高现有计量系统的分辨率和角度范围。 放置在计量光学元件和样品之间的浸没流体可以减少样品界面处的折射,从而在样品特征上减小光束的光斑尺寸,同时增加系统的角度范围。 减小的光斑尺寸与增加的角度扩展相结合,允许现有的计量系统以改进的分辨率测量样品(例如半导体或微电子器件)的参数,并且不会对计量学的力学进行昂贵和/或复杂的改变 系统。

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