公开(公告)号：US10910127B2

公开(公告)日：2021-02-02

申请号：US16502590

申请日：2019-07-03

申请人： II-VI Delaware, Inc.

发明人： Wen-Qing Xu ,  Chao Liu ,  Charles J. Kraisinger ,  Charles D. Tanner ,  Ian Currier ,  David Sabens ,  Elgin E. Eissler ,  Thomas E Anderson

IPC分类号： H01B1/04 ,  C01B32/25 ,  C23C16/27 ,  C23C16/52 ,  C01B32/26

摘要： In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction≥70% of the total number of diamond crystallites forming the polycrystalline diamond film.