公开(公告)号：US20240204094A1

公开(公告)日：2024-06-20

申请号：US18592325

申请日：2024-02-29

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Gaofei Tang ,  Daisuke Ueda ,  Hui Sun ,  Qilong Bao ,  Hanxing Wang

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/66462

Abstract: A gallium nitride component includes a gallium nitride layer, a barrier layer on a surface of a side of the gallium nitride layer, and a gate on a side that is of the barrier layer and that is away from the gallium nitride layer. The gallium nitride layer has a gate region and a non-gate region outside the gate region. The barrier layer is located in the gate region and the non-gate region. A size of the barrier layer located in the gate region is greater than a size of the barrier layer located in the non-gate region, and aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gallium nitride layer is greater than aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gate.