公开(公告)号：US08564086B2

公开(公告)日：2013-10-22

申请号：US13853192

申请日：2013-03-29

Applicant: General Electric Company

Inventor： Wen Li ,  Jonathan David Short ,  George Edward Possin

IPC: H01L27/146

CPC classification number: H01L27/14601 ,  A61B6/032 ,  G01T1/2018 ,  G01T1/249 ,  H01L31/105

Abstract: An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer.

Abstract translation: 减少光电二极管热增益系数的装置包括具有光照射侧的体半导体材料。 体半导体材料包括少数电荷载流子扩散长度特性，其被配置为基本上匹配预定的空穴扩散长度值和被配置为基本匹配预定的光电二极管层厚度的厚度。 该装置还包括耦合到体半导体材料的光照射侧的死层，该死层具有被配置为基本匹配预定厚度值的厚度，并且其中由少数载体产生的增益热系数的绝对值 体半导体材料的扩散长度特性被配置为基本上匹配由于死层的厚度而导致的增益热系数的绝对值。

公开(公告)号：US20130230134A1

公开(公告)日：2013-09-05

申请号：US13853192

申请日：2013-03-29

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Wen Li ,  Jonathan David Short ,  George Edward Possin

IPC: H01L27/146

CPC classification number: H01L27/14601 ,  A61B6/032 ,  G01T1/2018 ,  G01T1/249 ,  H01L31/105

Abstract: An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer.

Abstract translation: 减少光电二极管热增益系数的装置包括具有光照射侧的体半导体材料。 体半导体材料包括少数电荷载流子扩散长度特性，其被配置为基本上匹配预定的空穴扩散长度值和被配置为基本匹配预定的光电二极管层厚度的厚度。 该装置还包括耦合到体半导体材料的光照射侧的死层，该死层具有被配置为基本匹配预定厚度值的厚度，并且其中由少数载体产生的增益热系数的绝对值 体半导体材料的扩散长度特性被配置为基本上匹配由于死层的厚度而导致的增益热系数的绝对值。