公开(公告)号：US11315951B2

公开(公告)日：2022-04-26

申请号：US17094931

申请日：2020-11-11

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sung-Jae Chang ,  Dong Min Kang ,  Sung-Bum Bae ,  Hyung Sup Yoon ,  Kyu Jun Cho

IPC: H01L27/12 ,  H01L21/84 ,  H01L21/683 ,  H01L23/31

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate having a first region and a second region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a barrier layer disposed on the semiconductor layer, a first source electrode, a first drain electrode, and a first gate electrode disposed therebetween, which are disposed on the barrier layer in the first region, a second source electrode, a second drain electrode, and a second gate electrode disposed therebetween, which are disposed on the barrier layer in the second region, and a ferroelectric pattern interposed between the first gate electrode and the barrier layer.